The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 26, 1998
Filed:
Oct. 26, 1995
Applicant:
Inventor:
Taishi Kubota, Tokyo, JP;
Assignee:
NEC Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
257316 ; 257317 ; 257321 ;
Abstract
A floating gate type field effect transistor has a plurality of floating gate sub-electrodes on a lower gate oxide layer electrically isolated from one another; even if one of the floating gate sub-electrodes changes a part of a channel region thereunder to depletion state due to an over-erase, the over-erase does not affect the function of the floating gate type field effect transistor, because another sub-electrode transfers and cuts off channel current depending upon the amount of electrons accumulated therein.
Kubota, Taishi. (1998). Electrically erasable and programmable read only memory cell with split (U.S. Patent No. 5757044). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5757044
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile