The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 26, 1998
Filed:
Aug. 02, 1996
Applicant:
Inventors:
Naoto Saito, Chiba, JP;
Shinichi Yoshida, Chiba, JP;
Assignee:
Seiko Instruments Inc., , JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
257299 ; 257401 ; 363 60 ;
Abstract
A channel region is enclosed by a source region or drain region. A plurality of the resulting MOS transistors are diode connected in series to each other. The MOS transistors are formed in the well regions. As a result of this, it is possible to prevent breakdown at a time when a substrate bias is being applied and a resulting change in the threshold value due to the substrate bias effect.