The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 26, 1998
Filed:
Aug. 22, 1995
Do Yeol Ahn, Kyungki-Do, KR;
Goldstar Electron Co., Ltd., Cheongju, KR;
Abstract
An infrared photodetector using .delta.-doped semiconductors capable of reducing the requirement to form a quantum well structure of high quality, reducing the need of a cooling device due to the operation at the room temperature, and controlling the wavelength of infrared ray detected by controlling the .delta.-doped concentration. The infrared photodetector includes a semiconductor substrate, an active layer formed over the semiconductor substrate, .delta.-doped layers formed in the active layer, the .delta.-doped layer having a doping concentration controlled for controlling a wavelength of infrared ray detected, a current injection layer formed over the active layer, a cap layer formed over the current injection layer, and an electrode formed on the cap layer.