The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 26, 1998
Filed:
Sep. 25, 1996
Masakazu Kakumu, Kawasaki, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
In a semiconductor device, an n.sup.+ -type polysilicon layer is formed on a substrate through a gate oxide layer. A p.sup.+ -type source or drain diffusion layer is formed on both sides of an impurity layer in the substrate. The n.sup.+ -type polysilicon layer is positioned over an intermediate portion of a channel formation layer, and has an oxide layer on an upper surface thereof. The n.sup.+ -type polysilicon layer has at its side portions a p.sup.+ -type polysilicon layer to make a gate electrode together with the n.sup.+ -type polysilicon layer. The gate electrode semiconductor layer is formed on the channel formation layer through the gate insulation layer in such a manner that in a portion contacting with the gate insulation layer, the nearer the portion approaches the impurity layers of the source and drain regions, the larger the work function of the portion becomes.