The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 26, 1998
Filed:
May. 17, 1996
Applicant:
Inventors:
Takanobu Kamakura, Yokosuka, JP;
Norihiko Tsuchiya, Setagaya-ku, JP;
Assignee:
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Primary Examiner:
Int. Cl.
CPC ...
C30B / ;
U.S. Cl.
CPC ...
117 85 ; 117 86 ; 117202 ; 438141 ; 118715 ;
Abstract
In an extremely thin hetero-epitaxial growth film less than 1 .mu.m, the thin film can be grown at high precision by controlling the growth conditions. The method of growing a thin film on a semiconductor substrate comprises the steps of: forming a semiconductor thin film on a surface of a semiconductor substrate; allowing X-rays to be incident upon the thin film now being grown; measuring fluorescent X-rays emitted from the thin film now being grown in accompany with the application of the X-rays; and controlling growth conditions of the thin film on the basis of the measured values.