The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 19, 1998
Filed:
Sep. 25, 1995
Rudolph H Dyck, Palo Alto, CA (US);
Lockhead Martin Corporation, Milpitas, CA (US);
Abstract
A CCD sensor structure adapted for backside illumination, has a wide depletion layer separating the illuminated surface from potential barrier-like structures, e.g., in the form of a series of p-wells, that shield portions of the CCD channels and that cause the photoelectrons to converge through 'ports' between the p-wells into selected regions of the CCD channels. The potential barriers are thus arrayed to delineate at the CCD surface a series of charge-packet-forming or integrating regions, each of which has two (or more) adjacent shielded charge-packet-holding or storage regions into which the frame-indicative charge packets are successively shifted upon receipt of the light from successive image frames. With an anti-reflective coating on the illuminated back surface, this device not only provides 100% fill-factor for each of the successive frames, but also can provide very high quantum efficiency (QE) across the visible spectrum. A preferred embodiment utilizes 7-phase (non-barrier-type) ripple clocking for charge packet readout.