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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 5753960 B1

PDFFull Text
Date of Patent:
May. 19, 1998

Filed:

Aug. 19, 1996

Circuit with monolitically integrated p-i-n/schottky diode arrangement

Applicant:
Inventor:

Juergen Dickmann, Ulm, DE;

Assignees:

Daimler Benz AG, , US;

Temic Telefunken microelectronic GmbH, , US;

Attorney:

Spencer & Frank

Primary Examiner:

Minh-Loan Tran

Assistant Examiner:

David B Hardy

Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
257458 ; 257485 ;
Abstract

A monolithically integrated circuit for carrying out different mixer and switch functions includes: at least one p-i-n diode and at least one Schottky diode monolithically integrated in the circuit. The p-i-n diode and Schottky diode are made from a common semiconductor layer sequence. The semiconductor layer sequence respectively includes: highly doped p-contact and n-contact layers, and a lightly doped insulating layer grown between the contact layers and which includes an etch arresting layer at a defined distance d from one of the contact layers.

Find Patent Forward Citations

Dickmann, Juergen. (1998). Circuit with monolitically integrated p-i-n/schottky diode arrangement (U.S. Patent No. 5753960). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5753960

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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