The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 19, 1998
Filed:
Oct. 16, 1995
James B Burr, Foster City, CA (US);
Douglas Alan Laird, Los Gatos, CA (US);
Sun Microsystems, Inc., Mt. View, CA (US);
Abstract
An adjustable threshold voltage MOS device having an asymmetric pocket region is disclosed herein. The pocket region abuts one of a source or drain proximate the device's channel region. The pocket region has the same conductivity type as the device's bulk (albeit at a higher dopant concentration) and, of course, the opposite conductivity type as the device's source and drain. An MOS device having such pocket region may have its threshold voltage adjusted by applying a potential directly to its pocket region. This capability is realized by providing a contact or conductive tie electrically coupled to the pocket region. This 'pocket tie' is also electrically coupled to a metallization line (external to the device) which can be held at a specified potential corresponding to a potential required to back-bias the device by a specified amount.