The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 19, 1998
Filed:
Jun. 20, 1996
Applicant:
Inventors:
Yo Hwan Koh, Ichon, KR;
Seong Min Hwang, Ichon, KR;
Assignee:
Hyundai Electronics Industries Co., Ltd., Ichon-kun, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438229 ; 438230 ; 438593 ; 438596 ; 438655 ;
Abstract
A method for fabricating a metal oxide silicon field effect transistor (MOSFET) wherein a polysilicon layer is deposited over a gate oxide film serving to insulate the gate of the MOSFET from the substrate of the MOSFET. The polysilicon layer serves to prevent the gate oxide film from being etched upon forming a gate electrode using a metal film or metal silicide side walls as a mask. Accordingly, it is possible to prevent a short circuit from occurring between the semiconductor substrate and gate electrode of the MOSFET upon forming the gate electrode.