The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 19, 1998
Filed:
Sep. 13, 1996
Applicant:
Inventor:
George R Misium, Plano, TX (US);
Assignee:
Texas Instruments Incorporated, Dallas, TX (US);
Primary Examiner:
Int. Cl.
CPC ...
G03F / ;
U.S. Cl.
CPC ...
430313 ; 430319 ; 430330 ; 430396 ;
Abstract
A capacitor and method of forming the capacitor for high density applications. The capacitor (100) comprises a storage node (106) having waves (108) formed on the vertical surfaces thereof. The waves (108) are created using a silylated photoresist. The conditions of silylation and subsequent etch are such that, when etched, the silylated photoresist has waves on the vertical edges thereof. During the etch to form the storage node (106), the waves are transferred to the storage node (106). Waves (108) increase the surface area of the storage node (106) and thus the resulting capacitance.