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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 5753050 B1

PDFFull Text
Date of Patent:
May. 19, 1998

Filed:

Aug. 29, 1996

Thermophotovoltaic energy conversion device

Applicant:
Inventors:

Greg W Charache, Clifton Park, NY (US);

Paul F Baldasaro, Clifton Park, NY (US);

James L Egley, Burnt Hills, NY (US);

Assignee:

The United States of America as represented by the Department of Energy, Washington, DC (US);

Attorneys:

Caress; Virginia B.

Moser; William R.

Gottlieb; Paul A.

Primary Examiner:

Aaron Weisstuch

Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
136255 ; 136253 ; 136259 ; 136262 ; 257436 ; 438 77 ; 438 87 ;
Abstract

A thermophotovoltaic device and a method for making the thermophotovoltaic device. The device includes an n-type semiconductor material substrate having top and bottom surfaces, a tunnel junction formed on the top surface of the substrate, a region of active layers formed on top of the tunnel junction and a back surface reflector (BSR). The tunnel junction includes a layer of heavily doped n-type semiconductor material that is formed on the top surface of the substrate and a layer of heavily doped p-type semiconductor material formed on the n-type layer. An optional pseudomorphic layer can be formed between the n-type and p-type layers. A region of active layers is formed on top of the tunnel junction. This region includes a base layer of p-type semiconductor material and an emitter layer of n-type semiconductor material. An optional front surface window layer can be formed on top of the emitter layer. An optional interference filter can be formed on top of the emitter layer or the front surface window layer when it is used.

Find Patent Forward Citations

Charache, Greg. (1998). Thermophotovoltaic energy conversion device (U.S. Patent No. 5753050). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5753050

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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