The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 12, 1998
Filed:
Oct. 21, 1996
Applicant:
Inventors:
David K Liu, Fremont, CA (US);
Wenchi Ting, San Jose, CA (US);
Assignee:
Other;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C / ;
U.S. Cl.
CPC ...
36518501 ; 36518519 ; 257316 ; 257322 ;
Abstract
A method for sensing the content of a FLASH memory cell, and a new FLASH memory cell structure that is suitable for use with this new sensing scheme. In a first aspect, a semiconductor memory cell comprises a lightly doped n-region including a channel region; a first insulating layer overlying portions of said n-region; a floating gate overlying said first insulating layer; a second insulating layer overlying said floating gate; and a control gate overlying second insulating layer.