The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 12, 1998

Filed:

Apr. 11, 1996
Applicant:
Inventor:

Kiyonori Ogura, Kasugai, JP;

Assignee:

Fujitsu Limited, Kanagawa, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
257394 ; 257398 ; 257399 ; 257400 ;
Abstract

The semiconductor device according to the present invention includes a semiconductor substrate of a first conductive type. A well area of the first conductive type is formed in the substrate. The well area has higher concentration of impurity than that of the substrate. The well area includes a first element. The first element is of a second conductive type different from the first conductive type. A second element of the second conductive type formed in the substrate. The first element is isolated from the second element by a field oxide.


Find Patent Forward Citations

Ogura, Kiyonori. (1998). Semiconductor circuit with reduced p-n junction capacitance (U.S. Patent No. 5751047). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5751047

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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