The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 12, 1998
Filed:
Nov. 10, 1995
Applicant:
Inventors:
Minoru Sawada, Yawata, JP;
Yasoo Harada, Hirakata, JP;
Assignee:
Sanyo Electric Co., Ltd., Osaka-fu, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
257192 ; 257194 ;
Abstract
A field effect semiconductor device includes an undoped In.sub.0.2 Ga.sub.0.8 As first low-noise drift layer, an undoped In.sub.x Ga.sub.1-x As (x=0.2-0) second low-noise drift layer and an n-type GaAs high-power drift layer in this order. The high-power drift layer includes a first high-power drift layer doped with n-type carrier at high concentration and a second high-power drift layer doped with n-type carrier at low concentration.