The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 12, 1998
Filed:
Jun. 07, 1995
Applicant:
Inventor:
Craig J McLachlan, Valkaria, FL (US);
Assignee:
Harris Corporation, Palm Bay, FL (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438404 ; 438406 ; 438938 ;
Abstract
Oxygen induced lattice slip defects are reduced in device layer 26 of silicon-on-insulator structure 12, 16, 26. At the bottom of trenches 22 notches 28 are etched into the dielectric layer 16. A thermal oxide process provides protrusions 30 of oxide into the substrate. The protrusions 30 direct defects into the support layer 12.