The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 12, 1998
Filed:
Oct. 23, 1996
Tomoyoshi Kushida, Seto, JP;
Toyota Jidosha Kabushiki Kaisha, Toyota, JP;
Abstract
In a semiconductor device of the insulated gate type, a side wall silicon oxide layer of a desired width is formed on each side wall of a gate electrode and a silicon oxide layer to reduce a distance between the contact end of a source electrode with an N.sup.+ -type source region and the internal end of the gate electrode thereby to decrease the on-resistance even if the impurity concentration of the N.sup.+ -type is determined to be low. Since the impurity concentration of the N.sup.+ -type source region is lower than that of a P.sup.+ -type body region and higher than the surface impurity concentration of a P-type body region, the base width of a parasitic bipolar transistor related to the P-type body region is maintained in a proper value without increasing the depth of the N.sup.+ -type source region in excess.