The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 05, 1998

Filed:

Dec. 10, 1996
Applicant:
Inventors:

Akihiro Iwase, Kasugai, JP;

Tomio Nakano, Kasugai, JP;

Teruo Seki, Kasugai, JP;

Assignee:

Fujitsu Limited, Kanagawa, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
257173 ; 257355 ; 257566 ; 257575 ; 257557 ; 257560 ; 257563 ;
Abstract

A semiconductor device with an expanded range of a recommended condition for an input voltage is disclosed. In embodiment, the semiconductor device having input protection on an input terminal thereto, includes: a semiconductor region having a first conducting type, first and second diffusion regions defined in the semiconductor region and respectively having a second conducting type, and a transistor formed by using the semiconductor region as a base, the first diffusion region as a collector, and the second diffusion region as an emitter. The first diffusion region is connected to one of a high-potential power supply and a low-potential power supply, the second diffusion region is connected to the input terminal, and the semiconductor region is connected to another power supply having a voltage high enough to reverse bias the junction between the semiconductor region and the first diffusion region.


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