The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 05, 1998
Filed:
Jul. 15, 1997
Applicant:
Inventors:
Naoki Sakurai, Hitachi, JP;
Yoshitaka Sugawara, Hitachi, JP;
Assignee:
Hitachi, Ltd., Tokyo, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
257 66 ; 257349 ;
Abstract
A dielectric isolated high voltage semiconductor device having an arrangement for extending a depletion layer of a main junction beyond an insulating layer containing an island to a semiconductor supporter by applying the same reverse biasing voltage to the supporter and the islands. That is, in the structure, an electrode is provided at the back surface of the supporter and connected to a main electrode of the selected island. The above-mentioned main junction is the pn junction to which the reverse biasing voltage for securing the withstand voltage of the semiconductor device is applied.