The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 05, 1998
Filed:
Jun. 27, 1996
Minoru Niigaki, Hamamatsu, JP;
Toru Hirohata, Hamamatsu, JP;
Tuneo Ihara, Hamamatsu, JP;
Masami Yamada, Hamamatsu, JP;
Hamamatsu Photonics K.K., Hamamatsu, JP;
Abstract
The present invention provides a photoemission device excellent in quantum efficiency of photoelectric conversion, a high-sensitive electron tube employing it, and a high-sensitive photodetecting apparatus. A photoemission device of the present invention is arranged to have a photon absorbing layer for absorbing incident photons to excite photoelectrons, an insulator layer layered on one surface of the photon absorbing layer, a lead electrode layered on the insulator layer, and a contact formed on the other surface of the photon absorbing layer to apply a predetermined polarity voltage between the lead electrode and the other surface of the photon absorbing layer, whereby the photoelectrons excited by the incident photons entering the photon absorbing layer and moving toward the one side are made to be emitted by an electric field formed between the lead electrode and the one surface by the predetermined polarity voltage.