The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 05, 1998
Filed:
Aug. 25, 1995
Koutarou Koizumi, Kodaira, JP;
Sukeyoshi Tsunekawa, Iruma, JP;
Kazuhiko Kawai, Kodaira, JP;
Maki Shimoda, Hachiouji, JP;
Katsuhiko Itoh, Nishitama-gun, JP;
Haruo Itoh, Hino, JP;
Akio Saito, Isogo-ku, JP;
Hitachi, Ltd., Tokyo, JP;
Hitachi Microcomputer System Ltd., Tokyo, JP;
Abstract
According to the present invention, the surface of the sample is cleaned with water immediately after ashing of the resist the quality of which has been changed through ion implantation by ozone-containing gas, or ozone-containing gas and ultraviolet ray, or the sample is cleaned with water without being exposed to the atmosphere after ashing, thereby allowing the number of residues to be reduced to 1/100, decreasing the load in cleaning process by solution, cutting down the semiconductor device production cost and improving the semiconductor device productivity.