The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 05, 1998
Filed:
Oct. 03, 1996
Ching-Nan Yang, Jung-He, TW;
Li-Chun Peng, Hsin-Chu Shian, TW;
Mosel Vitelic Inc., Hsin Chu, TW;
Abstract
A process for manufacturing a CMOS device is disclosed. The process includes steps of forming a field oxide over a pad oxide excluding an active area in order to function the field oxide as an isolation layer; forming a gate oxide on the active area; forming a gate conducting layer over the field oxide and the gate oxide; forming a photoresist on the gate conducting layer; removing a portion of the photoresist and executing a first ion implantation in order to regulate a first threshold voltage of the one of the p-type and the n-type MOS regions; selectively forming an oxide on the gate conducting layer on the one of the p-type and the n-type MOS regions; eliminating a remaining portion of the photoresist on the other one of the p-type and the n-type MOS regions and executing a second ion implantation in order to regulate a second threshold voltage of the the other one of the p-type and the n-type MOS regions; and eliminating the oxide on the one of the p-type and the n-type MOS regions and forming gates, sources and drains in the CMOS device by patterning and etching the gate conducting layer.