The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 05, 1998
Filed:
Dec. 26, 1996
Applicant:
Inventors:
Francedilla.ois Brillouet, Clamart, FR;
Leon Goldstein, Chaville, FR;
Joel Jacquet, Limours, FR;
Antonina Plais, Paris, FR;
Paul Salet, Clamart, FR;
Assignee:
Alcatel Alsthom Compagnie Generale D'Electricite, Paris Cedex, FR;
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01S / ;
U.S. Cl.
CPC ...
438 44 ; 372 46 ;
Abstract
In a method of fabricating a surface emitting semiconductor layer, to achieve good electrical confinement and good flatness of the mirrors delimiting the resonant cavity of the laser, an electrical confinement layer is made by growing a localized aluminum alloy layer on the active layer, except for an opening area on top of which the mirror is to be formed. After epitaxial regrowth, the alloy layer is oxidized laterally. Applications include the fabrication of semiconductor lasers on III-V substrates such as InP and GaAs.