The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 28, 1998
Filed:
Jul. 22, 1996
U.S. Philips Corporation, New York, NY (US);
Abstract
The invention relates to a semiconductor device including an amplifier, and a mobile telecommunication terminal comprising this semiconductor device. The amplifier has a very high frequency a.c. signal and comprises a last stage but one of depletion-layer MESFET transistors (T3) and a last transistor stage (T4) of the same type, coupled by a d.c. isolation capacitor (C4). This capacitor (C4) forms with the intrinsic diode (.increment.4) of the transistor (T4) of the last stage a series-arranged rectifier circuit. The latter imposes a shift of the mean level of the a.c. signal on the terminals of said isolation capacitor once the amplitude of the positive part of this a.c. signal has exceeded the conduction threshold of the intrinsic diode (.increment.4). This shift of the mean level (-1.5 volts) is used as a negative voltage (-VG) for biasing the coupled gates of all the stages of the amplifier circuit.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile