The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 28, 1998
Filed:
Aug. 09, 1996
Yousuke Yamamoto, Tokyo, JP;
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Abstract
A semiconductor device includes a silicon substrate having a surface and a 20.about.150 .mu.m deep recess produced at the surface by anisotropic etching, the recess having a bottom and a plurality of side walls; an electrode disposed on a region at the bottom of the recess, the region including an element region where a semiconductor element is to be mounted and a wire bonding region where a wire is to be bonded; a semiconductor element mounted on a portion of the electrode within the element region; and a wire bonded to a portion of the electrode within the wire bonding region. In this semiconductor device, since the electrode is disposed at the flat bottom of the recess, there is no difference in level, i.e., no step, in the region, where the electrode is disposed, between the element region and the wire bonding region. Therefore, unwanted breaking of the electrode is avoided, and degradation of characteristics due to such a breaking is avoided.