The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 28, 1998
Filed:
Feb. 18, 1997
Percy Veryon Gilbert, Austin, TX (US);
Paul G Tsui, Austin, TX (US);
Shih-Wei Sun, Austin, TX (US);
Stephen G Jamison, Buda, TX (US);
Motorola Inc., Schaumburg, IL (US);
Abstract
A semiconductor device with an electrostatic discharge (ESD) protection transistor is devised, wherein the ESD protection transistor has halo regions of an opposite conductivity type from the source and drain regions adjacent thereto. In one embodiment, the ESD protection transistor is a thick field oxide (TFO) transistor. In some cases, the halo regions may be provided with an ion implant step without the use of an extra mask. The halo regions permit the ESD protection transistor to have its breakdown voltage adjusted so that it turns on before the device it is protecting is affected by an ESD event. The use of halo regions avoids the increase in device area and adverse effects to the AC performance of the circuit being protected that are disadvantages of prior approaches.