The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 28, 1998

Filed:

Apr. 19, 1995
Applicant:
Inventor:

Sun Woo Park, Palo Alto, CA (US);

Assignee:

Park Scientific Instruments, Sunnyvale, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F / ;
U.S. Cl.
CPC ...
1566281 ; 1566591 ; 216 87 ; 216 51 ; 430296 ; 430325 ; 430326 ;
Abstract

A process is provided for altering the susceptibility of a portion of a Spin-On Glass layer to etching. The process includes taking a substrate including a layer of positive or negative resist Spin-On Glass and exposing a portion of the Spin-On Glass layer to an electric field or an electron beam. Depending on the particular Spin-On Glass used, exposure of a portion of the Spin-On Glass layer to the electric field or electron beam causes the exposed portion to have either significantly enhanced or reduced susceptibility to etching as compared to the unexposed portion. This enables the exposed and unexposed portions to be differentiated by selectively removing the more etch susceptible portions of the Spin-On Glass layer during development.


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