The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 21, 1998
Filed:
Sep. 07, 1995
Norman P Barnes, Yorktown, VA (US);
Clyde A Morrison, Wheaton, MD (US);
Elizabeth D Filer, Poquoson, VA (US);
Mahendra G Jani, Poquoson, VA (US);
Keith E Murray, Newport News, VA (US);
George E Lockard, Newport News, VA (US);
Abstract
A laser host material LuLF (LuLiF.sub.4) is doped with holmium (Ho) and thulium (Tm) to produce a new laser material that is capable of laser light production in the vicinity of 2 .mu.m. The material provides an advantage in efficiency over conventional Ho lasers because the LuLF host material allows for decreased threshold and upconversion over such hosts as YAG and YLF. The addition of Tm allows for pumping by commonly available GaAlAs laser diodes. For use with flashlamp pumping, erbium (Er) may be added as an additional dopant. For further upconversion reduction, the Tm can be eliminated and the Ho can be directly pumped.