Redundancy scheme for semiconductor rams

Abstract

An integrated circuit memory structure includes a plurality of regular columns of memory cells arranged as a sequence such that each regular column except the last in the sequence has an associated adjacent regular column. Each regular column has associated sense amplifier circuitry and write driver circuitry for, respectively, reading output data from and writing input data to the regular column. At least one redundant column of memory cells is also provided. The structure also includes a programmable element that responds to a programming stimulus by providing a programming signal that identifies one of the regular columns as a defective column. Reconfiguration circuitry responds to the programming signal by reconfiguring the memory structure such that the sense amplifier circuitry and the write driver circuitry of each regular column in the sequence, beginning with the defective column, is reconfigured to be associated with the adjacent regular column. The sense amplifier circuitry associated with the last regular column in the sequence is reconfigured to be associated with the redundant column, which has its own associated write driver. The concepts of column redundancy are also applicable to row redundancy.