The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 14, 1998

Filed:

Jul. 12, 1996
Applicant:
Inventor:

Satoshi Wada, Kanagawa-ken, JP;

Assignee:

Kabushiki Kaisha Toshiba, Kawasaki, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H02H / ;
U.S. Cl.
CPC ...
361 56 ; 361111 ; 257355 ;
Abstract

A protective circuit in a semiconductor integrated circuit for protecting a semiconductor integrated circuit chip from an over voltage having a predetermined voltage potential level supplied to an input/output terminal in the semiconductor integrated circuit having a P-MOS FET whose drain electrode is connected to the input/output terminal and whose source electrode and drain electrode are commonly connected to a first power source, and a first N-MOS FET whose source electrode is connected to a back gate of the P-MOS FET, whose drain electrode and gate electrode are connected to the first power source and whose back gate is connected to a second power source, and a second N-MOS FET whose drain electrode is connected to the input/output terminal and whose source electrode, gate electrode and whose back gate are connected to the second power source.


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