The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 14, 1998
Filed:
Nov. 22, 1995
Michael R Kay, Richardson, TX (US);
Texas Instruments Incorporated, Dallas, TX (US);
Abstract
A current source (10) for use on an integrated circuit chip (14), particularly in conjunction with CMOS circuits or the like, includes a first MOS transistor (12), having a gate to control a current in a current flow path therethrough. A second MOS transistor (13) having a gate to control a current in a current flow path therethrough between a supply voltage and a reference potential is connected to the gate of the first MOS transistor (12). A current source (16) is connected at a connection node to the first MOS transistor (12) to supply a current in the current flow path of the first MOS transistor (12) to hold the first MOS transistor (12) on. The gate of the first MOS transistor (12) is connected to the connection node. A bias voltage source (V.sub.B) is provided in the current flow path of the first MOS transistor (12) with respect to the reference potential. With the circuit thus configured, the current flowing through the second MOS transistor (13) is essentially independent of the threshold voltage of the second MOS transistor (13). The MOS transistors can be either NMOS or PMOS transistors.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile