The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 14, 1998
Filed:
Feb. 14, 1997
Norio Goto, Tokyo, JP;
NEC Corporation, Tokyo, JP;
Abstract
A high power bipolar transistor comprises stacks of emitter, base, and collector regions and an emitter and a base connection on an obverse surface of a semiconductor substrate, and a via-hole member through the substrate between a selected one of the emitter and the base connections. A ground connection is formed on a reverse surface of the substrate. A high power bipolar transistor comprises a collector connection on a bottom surface of a semiconductor sheet having a level different from the reverse surface and a plurality of contact plugs formed through the semiconductor sheet between the collector connection and the collector regions, respectively. Preferably, the contact plugs are formed simultaneously with the via-hole member.