The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 14, 1998
Filed:
Jun. 02, 1995
Applicant:
Inventor:
Kazuyo Nakamura, Kitakatsuragi-gun, JP;
Assignee:
Sharp Kabushiki Kaisha, Osaka, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
257401 ; 257353 ; 257354 ; 257401 ; 257406 ; 257411 ; 257618 ; 257623 ; 438 29 ; 438 34 ;
Abstract
A semiconductor device which includes a mesa type silicon film with a source/drain region and a channel region formed therein, a gate oxide film formed on the mesa type silicon film, and a gate electrode provided on the mesa type silicon film through the gate oxide film, wherein an oxide film having a thickness greater than that of the gate film is formed at the top edge section of the mesa type silicon which is present under the gate electrode, as well as a method for manufacturing it.