The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 14, 1998
Filed:
Feb. 03, 1997
Applicant:
Inventor:
Ko Noguchi, Tokyo, JP;
Assignee:
NEC Corporation, Tokyo, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
257371 ; 257338 ;
Abstract
A high voltage semiconductor device includes a low voltage CMOSFET and a p-channel high voltage MOSFET having a drain formed in a p-well and a source in an n-well. The p-well has a bottom flush with the bottom of the n-well, and a heavily doped n-well is further provided at the bottom surface of the p-well at least a part of the bottom surface of the n-well. The high voltage MOSFET has a large rated voltage and is suited for fabrication in a finer structure.