The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 14, 1998
Filed:
Feb. 12, 1996
Applicant:
Inventor:
Kenji Yamamoto, Kobe, JP;
Assignee:
Kanegafuchi Chemical Industry Co., Ltd., Osaka, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
437 21 ; 437174 ; 437233 ; 437967 ; 437937 ; 117-8 ; 117904 ; 148D / ;
Abstract
A method for producing a substrate for forming a polysilicon thin film by forming an amorphous silicon film of a thickness not more than 200 .ANG., irradiating excimer laser light onto the amorphous silicon film to crystallize silicon particles contained in the amorphous silicon film; and irradiating the amorphous silicon film with hydrogen radicals to etch the amorphous silicon film.