The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 14, 1998

Filed:

Mar. 18, 1996
Applicant:
Inventors:

Hiroshige Okinoshima, Annaka, JP;

Tsutomu Kashiwagi, Annaka, JP;

Shinsuke Yamaguchi, Annaka, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F / ;
U.S. Cl.
CPC ...
4302851 ; 4302871 ; 4302881 ; 522 99 ;
Abstract

The composition comprises a (meth)acryloyloxyl group-containing organopolysiloxane having an average molecular weight of 3,000 to 100,000, in terms of polystyrene, and a photosensitizer. Such an organopolysiloxane having an average molecular weight of 3,000 or more is produced by subjecting (meth)acryloyloxypropyltrimethoxysilane and phenyltrimethoxysilane to cohydrolysis and subsequent condensation polymerization to produce a cohydrolysis-condensation polymerization product and then reacting and silylating the same product with a silylating agent such as hexamethyldisilazane. The composition containing such a high molecular weight (meth)acryloyloxyl-group-containing organopolysiloxane is excellent in sensitivity, resolution and storage stability and has little tackiness in uncured state after being coated, as well as being excellent in heat resistance after being cured. Thus, the composition is useful for photosensitive heat-resistant materials for use in semiconductor lithography and photosensitive heat-resistant materials for use in semiconductor passivation.


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