The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 07, 1998
Filed:
Sep. 18, 1995
Takashi Motoda, Itami, JP;
Manabu Kato, Itami, JP;
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Abstract
A multi-quantum barrier layer includes alternatingly laminated barrier layers of a III-V compound semiconductor material and well layers of a III-V compound semiconductor material including the same Group V element as in the barrier layers. During the formation of the multi-quantum barrier layer it is not necessary to switch the Group V element source gas at the interface between a barrier layer and a well layer so that this interface is abrupt, improving the electron reflection efficiency of the multi-quantum barrier layer.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile