The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 07, 1998
Filed:
Jan. 25, 1996
Applicant:
Inventor:
John R Spence, Villa Park, CA (US);
Assignee:
Rockwell International Corporation, Newport Beach, CA (US);
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H03L / ;
U.S. Cl.
CPC ...
327333 ; 327108 ; 326 81 ;
Abstract
A low voltage driver tolerant of high voltage and suitable for driving a processor and a memory device. A first protection NFET is coupled to the drains of a series-coupled PFET and NFET forming the basic driver components. Another protection NFET is connected in series to the first NFET. This second protection NFET requires approximately 1 volt for turn on, such that a resultant 3 volts appear at the output of the complete driver assembly. When the output driver is not enabled and 5 volt inputs are being applied from the memory circuit, the two NFET protection transistors block the 5 volts from reaching the processor output driver.