The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 07, 1998
Filed:
Oct. 31, 1995
Hiroshi Kadonishi, Kyoto, JP;
Rohm Co., Ltd., Kyoto, JP;
Abstract
A method for dividing a plural number of semiconductor devices into individual semiconductor devices to increase the number of chips manufactured per wafer by forming scribing lines in narrow width. Isotropic etching, such as plasma etching in CF.sub.4, O.sub.2 gas, is carried out by utilizing resist layer 31c to 35a as a mask. Then by carrying out heat treatment the resist layer 31 to 35a loosens, and as a result, side walls of the passivation layer 15 are covered with the resist layer. N type epitaxial layer 4 of the openings 24 and 25 for the scribing line is etched by carrying out isotropic plasma etching once again. Since the side walls of the passivation layer 15 of the openings 24 and 25 for the scribing line are covered with the resist layer, the openings 24 and 25 are not etched in the horizontal direction.