The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 31, 1998
Filed:
Nov. 29, 1995
Hideo Makishima, Tokyo, JP;
Yoshiaki Yanai, Shiga, JP;
NEC Corporation, Tokyo, JP;
Abstract
In a field emission cold cathode composed of a plurality of micro cold cathodes, the diameter of a plurality of openings formed in a gate electrode is large at a central region of an electron emission zone but small at a peripheral region of the electron emission zone, or the thickness of the gate electrode is small at the central region of the electron emission zone but large at the peripheral region of the electron emission zone. Alternatively, the thickness of an insulator layer is small at the central region of the electron emission zone but large at the peripheral region of the electron emission zone. Or, a resistance layer is provided between a substrate and a plurality of electron emission electrodes, and resistivity of the resistance layer is small at the central region of the electron emission zone but large at the peripheral region of the electron emission zone.