The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 31, 1998
Filed:
Jun. 05, 1996
Satwinder Malhi, Garland, TX (US);
Texas Instruments Incorporated, Dallas, TX (US);
Abstract
An improved high-voltage device structure (10, 50, or 60) is a hybrid silicon-based/non-silicon-based power device that has a low R.sub.ds(on) relative to devices formed using only a silicon substrate and includes control circuit (14, 14', or 14') formed on silicon substrate region (12 or 62). High-voltage circuit (16, 16' or 16') is formed in non-silicon substrate region (18). Connecting circuitry (34 and 66) connects control circuit (14, 14', and 14') with high-voltage circuit (16, 16' or 16') to form high-voltage device structure (10, 50 or 60) that has improved control circuit performance and improved high-voltage circuits performance over devices formed solely from a silicon substrate or solely from a non-silicon substrate.