The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 31, 1998

Filed:

Sep. 20, 1996
Applicant:
Inventor:

Hiromi Sakamoto, Kashiba, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; G02F / ;
U.S. Cl.
CPC ...
257 49 ; 257 88 ; 257 98 ; 257 99 ; 257368 ; 257390 ; 257750 ; 257758 ; 257773 ; 257296 ; 349 46 ; 349 47 ; 349 38 ; 438 40 ; 438 48 ; 438181 ;
Abstract

A semiconductor device formed on an insulating substrate of the present invention includes: a gate wiring provided on the insulating substrate; a first insulating film provided so as to cover the gate wiring; an upper electrode formed so as to face the gate wiring in such a manner that the first insulating film is interposed therebetween; a second insulating film provided so as to cover the upper electrode; and another electrode formed on the second insulating film, wherein the upper electrode is electrically connected to the another electrode via a contact hole formed through the second insulating film, a storage capacitor is formed of a structure including the upper electrode, the first insulating film, and the gate wiring opposing the upper electrode through the first insulating film, the upper electrode and the gate wiring have substantially the same width.


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