The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 31, 1998
Filed:
Feb. 06, 1997
Electronics and Telecommunications Research Institute, Daejeon, KR;
Abstract
A process for formation of a thin film transistor which can be usefully applied to a high picture quality active matrix liquid crystal display is disclosed. Particularly, a process for formation of an improved polysilicon thin film transistor is disclosed. In the process for formation of a polysilicon thin film transistor, the solid phase crystallization of a non-crystalline silicon is carried out under a high pressure oxygen atmosphere, and therefore, the solid phase crystallization time for a non-crystalline silicon is shortened so as to improve the productivity, and the grain size of the polysilicon is made more uniform so as improve the electrical characteristics of the TFT (thin film transistor).