The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 24, 1998
Filed:
Jul. 25, 1996
Takayuki Kawasumi, Kanagawa, JP;
Norikazu Nakayama, Kanagawa, JP;
Akira Ishibashi, Kanagawa, JP;
Yoshifumi Mori, Kanagawa, JP;
Sony Corporation, Tokyo, JP;
Abstract
A p-type GaAs current block layer is stacked on a (100)-oriented n-type GaAs substrate, and a stripe-shaped groove is formed in the p-type GaAs current block layer to extend in the <01-1> direction. Side surfaces of the groove has the maximum inclination not larger than 60.degree.. The thickness of the p-type GaAs current block layer is 1.5 .mu.m or more. Stacked on the structured substrate having the current narrowed mechanism via an n-type ZnSe buffer layer are an n-type ZnMgSSe cladding layer, n-type ZnSSe waveguide layer, active layer, p-type ZnSSe waveguide layer, p-type ZnMgSSe cladding layer, and others, to establish an index-guided inner-striped semiconductor laser having SCH structure and CSPW structure.