The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 24, 1998
Filed:
Sep. 24, 1996
Korea Information & Communication Co., Ltd., Seoul, KR;
Other;
Abstract
The present invention provides field emitter arrays (FEAs) incorporated with metal oxide semiconductor field effect transistors (MOSFETs) and method for fabricating the same which realizes a simultaneous fabrication of two kinds of devices, namely, an FEA and MOSFETs, by using common processing steps among the processes of fabricating Si-FEAs or metal FEAs and MOSFETs, wherein the method comprises steps of forming field emission tips and active regions for MOSFETs by oxidizing selected portions of a silicon nitride layer, forming a gate insulating oxide layer for the FEA and field oxide layers for MOSFETs simultaneously by the LOGOS method and connecting gate electrodes (row line) and cathode electrodes (column line) of the FEA to MOSFETs.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile