The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 24, 1998
Filed:
Dec. 28, 1994
Jochen Gerner, Wiesloch, DE;
Temic Telefunken microelectronic GmbH, Heilbronn, DE;
Abstract
A method for manufacturing ohmic contacts on an n-doped semiconductor layer of a III-V compound semiconductor. An AuGeNi layer is formed on the n-type III-V compound semiconductor, where the thickness of the AuGeNi layer is between 50 and 200 nm and both the germanium and the nickel concentration in the AuGeNi layer are less than 1 percent by weight. An Au layer with a thickness of between 250 and 1000 nm is applied to the AuGeNi layer. These layers are not alloyed but tempered either at a temperature between 430.degree. and 480.degree. C. for a period between 5 and 20 seconds or at a temperature between 360.degree. and 400.degree. C. for a period between 40 and 180 minutes. The metal semiconductor contact produced in this way has a low contact resistance and is free from the inhomogeneities of alloyed AuGeNi contacts.