The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 17, 1998
Filed:
Oct. 27, 1994
Tadashi Ohba, Tokyo, JP;
Norio Tomiie, Tokyo, JP;
Keiji Itsukushima, Tokyo, JP;
Hisashi Higuchi, Shiga, JP;
Kyocera Corporation, Tokyo, JP;
Abstract
An electrophotographic apparatus using an a-Si photosensitive drum. The a-Si photosensitive drum has a thickness between 2 and 25 .mu.m. The initial charging potential on the photosensitive drum is set to 450V or below. The center exposure wavelength of an exposure means is set to 700 nm or above. The photosensitive drum includes a photoconductive layer formed as a thin film a-Si layer having a temperature characteristic of 1.0 V/.degree.C. or below. For realizing low charging potential and low electric field development, the thickness d of the photoconductive layer in the photosensitive drum is set to 2 to 24 .mu.m, the relative dielectric constant .epsilon.r is set to 2 or above, and the ratio d/.epsilon.r is set to 9 or below. The photosensitive drum is formed on a conductive support and has a three-layer structure, including a carrier charge blocking layer for blocking the introduction of carrier charge (of the opposite polarity to that of charging) from the conductive support into the photoconductive layer, a photoconductive layer and an insulating or high resistivity layer.