The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 17, 1998
Filed:
Aug. 26, 1994
John J Drab, Encitas, CA (US);
O Glenn Ramer, Los Angeles, CA (US);
Hughes Electronics, Los Angeles, CA (US);
Abstract
A memory cell is constructed using a ferroelectric capacitor having an insulator formed of a ferroelectric material that has a zero field capacitance which is controllably dependent upon the electrical charging path by which the zero field capacitance is reached. Preferably, the material is characterized by a first zero field capacitance following saturation of the polarization by a first applied voltage applied in a first polarization direction, and a second zero field capacitance following saturation of the polarization by the first applied voltage applied in the first polarization direction followed by partial depolarization by a second voltage applied in a direction opposite to the first polarization direction. A second ferroelectric capacitor or a linear capacitor may be placed in parallel with the ferroelectric capacitor to form a two-capacitor memory cell. Data may be read to or from the capacitor cell without impairing the state of the stored data.