The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 17, 1998
Filed:
Oct. 11, 1996
Applicant:
Inventor:
Joseph F Shepard, Hopewell Junction, NY (US);
Assignee:
International Business Machines Corporation, Armonk, NY (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
257519 ; 257368 ; 257372 ; 257374 ; 257396 ; 257398 ; 257399 ; 257400 ; 257506 ; 257509 ; 257510 ; 257519 ; 257525 ; 257647 ;
Abstract
A method for forming trench isolation and in specific shallow trench isolation(STI) using SiO.sub.2 plugs is proposed. The SiO.sub.2 plugs of the STI have a buried phosphorus (P) rich layer introduced during and subsequent to the trench formation to tie up any sodium ionic contamination from processes prior to gate formation. P impurity layer is formed below the surface of the deposited SiO.sub.2 layer. A preferred method for forming the buried P layer is by shallow implantation in a vertical direction into the deposited SiO.sub.2 layer prior to planarization. The process is self aligned to the trench isolation regions.