The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 17, 1998
Filed:
Jul. 10, 1996
Akio Uenishi, Hyogo, JP;
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Abstract
A p type collector region is formed at the side of collector surface of an n.sup.- region with an n type buffer region. This p type collector region has a structure including a p type impurity region and a p.sup.+ impurity region. Impurity concentrations of the p type impurity region, the p.sup.30 impurity region and the n type buffer region are of a prescribed relationship, and the diffusion depth of the p type impurity region from the collector surface is not lower than 2.0 .mu.m. Thus, a semiconductor device in which turn-off loss is sufficiently low and which is not likely to be affected by thermal treatment upon formation of each of the impurity V regions can be obtained.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile