The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 17, 1998

Filed:

Jan. 17, 1996
Applicant:
Inventor:

Richard H Nadolink, Portsmouth, RI (US);

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01L / ;
U.S. Cl.
CPC ...
73800 ; 73760 ;
Abstract

A stress detection apparatus is provided. A piece of semiconductor grade, ngle crystal silicon mounted on the material is illuminated by an infrared source with radiation having a wavelength in the range of 800-1100 nanometers. An infrared detector monitors the photoelastic effects of illuminating the single crystal silicon with the radiation.


Find Patent Forward Citations

Nadolink, Richard. (1998). Photoelastic stress sensor (U.S. Patent No. 5728944). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5728944

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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